The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Jul. 02, 2012
Applicants:

Binghua HU, Plano, TX (US);

Sameer Pendharkar, Allen, TX (US);

Guru Mathur, Plano, TX (US);

Takehito Tamura, Ichikawa, JP;

Inventors:

Binghua Hu, Plano, TX (US);

Sameer Pendharkar, Allen, TX (US);

Guru Mathur, Plano, TX (US);

Takehito Tamura, Ichikawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/283 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/02109 (2013.01); H01L 21/265 (2013.01); H01L 21/283 (2013.01); H01L 21/32055 (2013.01); H01L 21/76232 (2013.01); H01L 29/0619 (2013.01);
Abstract

The width of a heavily-doped sinker is substantially reduced by forming the heavily-doped sinker to lie in between a number of closely-spaced trench isolation structures, which have been formed in a semiconductor material. During drive-in, the closely-spaced trench isolation structures significantly limit the lateral diffusion.


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