The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Sep. 09, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tatsuya Tamura, Iwate, JP;

Takeshi Kumagai, Iwate, JP;

Takashi Chiba, Iwate, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); C23C 16/402 (2013.01); C23C 16/45551 (2013.01); H01L 21/0228 (2013.01);
Abstract

A method of manufacturing a silicon oxide film is provided. In the method, a substrate having a metal film on a surface thereof is loaded in a reaction chamber, and supply of a hydrogen gas into the reaction chamber is started by a hydrogen gas supply unit after the step of loading the substrate in the reaction chamber. Then, supply of an oxidation gas into the reaction chamber is started by an oxidation gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber, and supply of a silicon-containing gas into the reaction chamber is started by a silicon-containing gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber.


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