The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Mar. 18, 2014
Applicant:
Integrated Silicon Solution, Inc., Milpitas, CA (US);
Inventors:
Sung Jin Yoo, San Jose, CA (US);
Luis Kang, Cupertino, CA (US);
Assignee:
Integrated Silicon Solution, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 16/28 (2006.01); G11C 7/04 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 7/04 (2013.01); G11C 7/062 (2013.01); G11C 2207/063 (2013.01);
Abstract
A flash memory device uses a pair of parallely connected NMOS transistors with different voltage ratings to generate the reference current for the sense amplifier used in the read out operations. The reference current thus generated is temperature compensated with zero or near-zero temperature coefficient. In some embodiments, the pair of parallely connected NMOS transistors includes a high voltage NMOS transistor and a low voltage NMOS transistor or NMOS transistors with different gate oxide thicknesses.