The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Jun. 26, 2014
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Yoshimasa Yoshioka, Toyama, JP;

Akio Misaka, Toyama, JP;

Shigeo Irie, Niigata, JP;

Hiroshi Sakaue, Kanagawa, JP;

Masaru Sasago, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/70 (2012.01); G03F 1/38 (2012.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
G03F 1/38 (2013.01); G03F 1/70 (2013.01); H01L 21/0274 (2013.01); H01L 21/32139 (2013.01);
Abstract

An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(λ/NA)×M or less (where λ is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern.


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