The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Jun. 17, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Kosuke Imafuku, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/02 (2006.01); C30B 15/00 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C01B 33/02 (2013.01); C30B 15/00 (2013.01); C30B 29/06 (2013.01); C30B 35/007 (2013.01);
Abstract

A silicon component in a processing chamber for performing an etching process on a substrate is provided. The silicon component contains recycled silicon obtained by a silicon component recycling method including: collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity into a crucible; and manufacturing the final product using the silicon ingot.


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