The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Oct. 02, 2014
Glyphtron Corp., Hsinchu County, TW;
Chrong-Jung Lin, Hsinchu, TW;
GLYPHTRON CORP., Hsinchu County, TW;
Abstract
A non-volatile memory includes a substrate, a fin structure, a gate structure, a transition layer, and a metal layer. The fin structure is protruded from the substrate. A first source/drain region and a second source/drain region are formed in the fin structure. The gate structure covers a top surface and two lateral surfaces of a part of the fin structure. The gate structure is arranged between the first source/drain region and the second source/drain region. The transition layer is in contact with the second source/drain region. The metal layer is in contact with the transition layer. By setting or resetting the transition layer, a resistance value of the transition layer is correspondingly changed.