The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Dec. 18, 2013
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Jung-Yi Guo, Tainan, TW;

Chun-Min Cheng, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/115 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/32133 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01);
Abstract

Present example embodiments relate generally to methods of fabricating a semiconductor device, and semiconductor devices thereof, comprising providing a substrate, forming an insulating base layer on the substrate, and disposing a conductive layer on the insulating base layer at an initial temperature. The methods further comprise increasing the initial temperature at a first increase rate to a first increased temperature and performing an in-situ annealing process to the conductive layer at the first increased temperature. The methods further comprise increasing the first increased temperature at a second increase rate to a second increased temperature, and forming an insulating layer after performing the in-situ annealing process at the second increased temperature.


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