The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Jul. 08, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Pil-Kyu Kang, Anyang-si, KR;
Seok-Ho Kim, Bucheon-si, KR;
Tae-Yeong Kim, Suwon-si, KR;
Hyo-Ju Kim, Seoul, KR;
Byung-Lyul Park, Seoul, KR;
Yeun-Sang Park, Yongin-si, KR;
Jin-Ho An, Seoul, KR;
Ho-Jin Lee, Seoul, KR;
Joo-Hee Jang, Hwaseong-si, KR;
Deok-Young Jung, Seoul, KR;
Abstract
In a method, a first opening is formed in a first insulating interlayer on a first substrate. A first conductive pattern structure contacting a first diffusion prevention insulation pattern and having a planarized top surface is formed in the first opening. Likewise, a second conductive pattern structure contacting a second diffusion prevention insulation pattern is formed in a second insulating interlayer on a second substrate. A plasma treatment process is performed on at least one of the first and second substrates having the first and second conductive pattern structures thereon, respectively. The first and second conductive pattern structures are contacted to each other to bond the first and second substrates.