The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Sep. 26, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sang-Hyun Lee, Seoul, KR;

Myeong-Cheol Kim, Suwon-si, KR;

Yoo-Jung Lee, Hwaseong-si, KR;

Il-Sup Kim, Suwon-si, KR;

Seung-Ju Park, Boryeong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/31144 (2013.01); H01L 21/76877 (2013.01);
Abstract

A method of manufacturing a wiring includes sequentially forming a first insulation layer, a first layer, and a second layer on a substrate, etching an upper portion of the second layer a plurality of times to form a second layer pattern including a first recess having a shape of a staircase, etching a portion of the second layer pattern and a portion of the first layer under the first recess to form a first layer pattern including a second recess having a shape of a staircase similar to the first recess, etching a portion of the first layer pattern under the second recess to form a first opening exposing a portion of a top surface of the first insulation layer, etching the exposed portion of the first insulation layer to form a second opening through the first insulation layer, and forming a wiring filling the second opening.


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