The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Mar. 13, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Yoichi Minemura, Yokkaichi, JP;

Takayuki Tsukamoto, Yokkaichi, JP;

Takamasa Okawa, Yokkaichi, JP;

Hiroshi Kanno, Yokkaichi, JP;

Atsushi Yoshida, Yokkaichi, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/5685 (2013.01); G11C 13/0064 (2013.01); G11C 13/0007 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01);
Abstract

A nonvolatile semiconductor memory device according to an embodiment includes a control circuit configured to cause data to be stored in a memory cell by setting the memory cell to be included in one of resistance value distributions. The control circuit is configured to set a first resistance value distribution and a second resistance value distribution, the second resistance value distribution having a resistance value larger than that of the first resistance value distribution, and to set a second width to be larger than a first width, the second width being a width between a second upper limit value of the second resistance value distribution and a second lower limit value of the second resistance value distribution, and the first width being a width between a first upper limit value of the first resistance value distribution and a first lower limit value of the first resistance value distribution.


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