The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Jun. 17, 2012
Applicants:

Yutaka Nishioka, Shizuoka, JP;

Kazumasa Horita, Shizuoka, JP;

Natsuki Fukuda, Shizuoka, JP;

Shin Kikuchi, Shizuoka, JP;

Koukou Suu, Shizuoka, JP;

Inventors:

Yutaka Nishioka, Shizuoka, JP;

Kazumasa Horita, Shizuoka, JP;

Natsuki Fukuda, Shizuoka, JP;

Shin Kikuchi, Shizuoka, JP;

Koukou Suu, Shizuoka, JP;

Assignee:

ULVAC, INC., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); G11C 11/5614 (2013.01); G11C 13/0007 (2013.01); H01L 45/08 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01); H01L 45/1675 (2013.01); G11C 2213/15 (2013.01); G11C 2213/56 (2013.01);
Abstract

To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change elementaccording to an embodiment of the present invention includes a bottom electrode layer, a top electrode layerand an oxide semiconductor layer. The oxide semiconductor layerhas a first metal oxide layerand a second metal oxide layer. The first metal oxide layeris formed between the bottom electrode layerand the top electrode layer, and in ohmic contact with the bottom electrode layer. The second metal oxide layeris formed between the first metal oxide layerand the top electrode layer, and in ohmic contact with the top electrode layer.


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