The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Jun. 05, 2008
Applicant:

Naoki Takeguchi, Fukushima-Ken, JP;

Inventor:

Naoki Takeguchi, Fukushima-Ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66833 (2013.01); H01L 21/02532 (2013.01); H01L 21/02664 (2013.01); H01L 21/76832 (2013.01); H01L 29/792 (2013.01); H01L 29/66825 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Structures and methods for blocking ultraviolet rays during a film depositing process for semiconductor device are disclosed. In one embodiment, a semiconductor device includes an oxide-nitride-oxide (ONO) film formed on a semiconductor substrate, a gate electrode formed on the ONO film, a lower layer insulation film formed on the ONO film and the gate electrode, and a ultraviolet (UV) blocking layer based on a plurality of granular particles scattered in at least one insulation film formed on lower layer insulation film, where the UV blocking layer suppresses UV rays generated during an additional film deposition from reaching the ONO film.


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