The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Dec. 16, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Hiroshi Kanno, Mie-ken, JP;

Yoichi Minemura, Mie-ken, JP;

Takayuki Tsukamoto, Mie-ken, JP;

Takamasa Okawa, Mie-ken, JP;

Atsushi Yoshida, Mie-ken, JP;

Hideyuki Tabata, Mie-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); H01L 27/249 (2013.01); H01L 45/10 (2013.01); H01L 45/1226 (2013.01); H01L 45/14 (2013.01); H01L 45/145 (2013.01); H01L 45/16 (2013.01); H01L 45/1616 (2013.01); H01L 45/1675 (2013.01);
Abstract

According to an embodiment, a non-volatile memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction orthogonal to the first direction. The device includes third wirings, and a first and a second memory. The third wirings extend in a third direction crossing the first direction and orthogonal to the second direction, and aligned in the second direction on both sides of the second wiring. The first memory is provided between one of third wiring pair and the second wiring, the pair of third wirings facing each other across the second wiring. The second memory is provided between another one of the third wiring pair and the second wiring. The second wiring has a block portion between a first portion in contact with the first memory and a second portion in contact with the second memory.


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