The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Jul. 11, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Yu-Cheng Lin, Tainan, TW;
Hui-Shen Shih, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76835 (2013.01); H01L 21/76819 (2013.01); H01L 21/76822 (2013.01); H01L 21/76826 (2013.01); H01L 21/76838 (2013.01);
Abstract
A method for fabricating interlayer dielectric (ILD) layer is disclosed. The method includes the steps of first forming a first tensile dielectric layer on a substrate, and then forming a second tensile dielectric layer on the first tensile dielectric layer.