The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Oct. 17, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Martin Glodde, Pine Brook, NJ (US);

Wu-Song Huang, Brewster, NY (US);

Hiroyuki Miyazoe, White Plains, NY (US);

Ratnam Sooriyakumaran, San Jose, CA (US);

Hsinyu Tsai, White Plains, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); G03F 7/09 (2006.01); G03F 7/075 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/02153 (2013.01); H01L 21/02282 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); G03F 7/0752 (2013.01); G03F 7/0757 (2013.01); G03F 7/094 (2013.01);
Abstract

A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch.


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