The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Feb. 28, 2012
Applicants:

Jason K. Stowers, Corvallis, OR (US);

Stephen T. Meyers, Corvallis, OR (US);

Michael Kocsis, San Francisco, CA (US);

Douglas A. Keszler, Corvallis, OR (US);

Andrew Grenville, Eugene, OR (US);

Inventors:

Jason K. Stowers, Corvallis, OR (US);

Stephen T. Meyers, Corvallis, OR (US);

Michael Kocsis, San Francisco, CA (US);

Douglas A. Keszler, Corvallis, OR (US);

Andrew Grenville, Eugene, OR (US);

Assignee:

Inpria Corporation, Corvallis, OR (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/308 (2006.01); H01L 21/316 (2006.01); C23C 18/06 (2006.01); C23C 18/12 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); G03F 7/09 (2006.01); H01L 21/033 (2006.01); G03F 7/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); C23C 18/06 (2013.01); C23C 18/1216 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02194 (2013.01); H01L 21/02282 (2013.01); H01L 21/0332 (2013.01); H01L 21/31122 (2013.01); H01L 21/31641 (2013.01); G03F 7/16 (2013.01); H01L 21/0338 (2013.01); H01L 21/3088 (2013.01);
Abstract

Solution processible hardmasks are described that can be formed from aqueous precursor solutions comprising polyoxometal clusters and anions, such as polyatomic anions. The solution processible metal oxide layers are generally placed under relatively thin etch resist layers to provide desired etch contrast with underlying substrates and/or antireflective properties. In some embodiments, the metal oxide hardmasks can be used along with an additional hardmask and/or antireflective layers. The metal oxide hardmasks can be etched with wet or dry etching. Desirable processing improvements can be obtained with the solution processible hardmasks.


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