The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Mar. 18, 2013
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Mina Ryo, Tsukuba, JP;
Shinichi Nakamata, Tsukuba, JP;
Akimasa Kinoshita, Tsukuba, JP;
Kenji Fukuda, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
Abstract
An ohmic electrode () of a silicon carbide semiconductor apparatus is fabricated by forming an ohmic metal film on a silicon carbide substrate () by sputtering a target including a mixture or an alloy having therein nickel, and a metal(s) reducing the magnetic permeability of nickel and producing a carbide, where compositional ratios of the mixture or alloy are adjusted to predetermined compositional ratios, and by executing heat treatment for the ohmic metal film to calcinate the ohmic metal film. Thus, the ohmic electrode () that is for the silicon carbide semiconductor apparatus and capable of improving the use efficiency of the target can be manufactured, whose film thickness is even and that does not peel off.