The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Feb. 12, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Matthew J. BrightSky, Pound Ridge, NY (US);

Chung H. Lam, Peekskill, NY (US);

Alejandro G. Schrott, New York, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1293 (2013.01); H01L 45/06 (2013.01); H01L 45/065 (2013.01); H01L 45/126 (2013.01); H01L 45/128 (2013.01); H01L 45/1233 (2013.01); H01L 45/1286 (2013.01); H01L 45/144 (2013.01); H01L 45/16 (2013.01); H01L 45/1683 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/124 (2013.01);
Abstract

A method for fabricating the phase change memory cells. The method includes forming an electrically conductive bottom electrode within a substrate. A heat shield is formed within the substrate and above the bottom electrode. The heat shield is thermally coupled to the bottom electrode, includes a sidewall and extends away from the bottom electrode. A heating element is formed within the sidewall of the heat shield. The heating element is electrically coupled to the bottom electrode and is configured to generate heat during programming of the phase change memory cell.


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