The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Aug. 14, 2013
Woo Chang Lim, Seoul, KR;
Sangyong Kim, Suwon-si, KR;
Whankyun Kim, Seoul, KR;
Sang Hwan Park, Hwaseong-si, KR;
Jeongheon Park, Hwaseong-si, KR;
Woo Chang Lim, Seoul, KR;
Sangyong Kim, Suwon-si, KR;
Whankyun Kim, Seoul, KR;
Sang Hwan Park, Hwaseong-si, KR;
Jeongheon Park, Hwaseong-si, KR;
Abstract
A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer.