The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
May. 21, 2014
Fujitsu Limited, Kawasaki, JP;
Sumitomo Electric Device Innovations, Inc., Yokohama, JP;
Nami Yasuoka, Kawasaki, JP;
Haruhiko Kuwatsuka, Kawasaki, JP;
Toru Uchida, Nakakoma, JP;
Yoshihiro Yoneda, Nakakoma, JP;
FUJITSU LIMITED, Kawasaki, JP;
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Yokohama, JP;
Abstract
In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.