The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Oct. 16, 2014
International Business Machines Corporation, Armonk, NY (US);
Thomas W. Dyer, Pleasant Valley, NY (US);
Haining S. Yang, San Diego, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Semiconductor devices are provided which have a tensile and/or compressive strain applied thereto and methods of manufacturing. A method of forming a semiconductor structure includes forming sidewalls and spacers adjacent to a gate stack structure, and forming a recess in the gate stack structure. The method further includes epitaxially growing a straining material on a polysilicon layer of the gate stack structure, and in the recess in the gate stack structure. The straining material is Si:C and the gate stack structure is a PFET gate stack structure. The straining material is grown above and covering a top surface of the sidewalls and the spacers.