The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jun. 26, 2015
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventors:
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/778 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 27/0629 (2013.01); H01L 28/60 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/42316 (2013.01); H01L 29/42376 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01);
Abstract
A low leakage current switch device () is provided which includes a GaN-on-Si substrate (-) covered by a passivation surface layer () in which a T-gate electrode with sidewall extensions () is formed and coated with a conformal passivation layer () so that the T-gate electrode sidewall extensions are spaced apart from the underlying passivation surface layer () by the conformal passivation layer ().