The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jun. 27, 2013
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Wei-Chih Chien, New Taipei, TW;
Dai-Ying Lee, Hsinchu County, TW;
Erh-Kun Lai, Taichung, TW;
Ming-Hsiu Lee, Hsinchu, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 29/66 (2006.01); H01L 45/00 (2006.01); H01L 29/861 (2006.01); E04H 17/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); E04H 17/16 (2013.01); H01L 29/8615 (2013.01); H01L 45/145 (2013.01); H01L 45/1608 (2013.01);
Abstract
A self-rectified device is provided, comprising a bottom electrode, a patterned dielectric layer with a contact hole formed on the bottom electrode, a memory formed at the bottom electrode and substantially aligned with the contact hole, and a top electrode formed on the bottom electrode and filling into the contact hole to contact with the memory, wherein the top electrode comprises a N+ type semiconductor material or a P+ type semiconductor material, and the memory and the top electrode produce a self-rectified property.