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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9276010 B1

PDFFull Text
Expired
Date of Patent:
Mar. 01, 2016

Filed:

Jun. 05, 2014

Dual silicide formation method to embed split gate flash memory in high-k metal gate (hkmg) technology

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Harry-Hak-Lay Chuang, Zhubei, TW;

Wei Cheng Wu, Zhubei, TW;

Ya-Chen Kao, Fuxing Township, TW;

Fang-Lan Chu, Taichung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Eschweiler & Associates, LLC

Primary Examiner:

Evan Pert

Assistant Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H01L 29/88 (2006.01); H01L 21/336 (2006.01); H01L 27/115 (2006.01); H01L 29/792 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11573 (2013.01); H01L 29/66484 (2013.01); H01L 29/66833 (2013.01); H01L 29/7831 (2013.01); H01L 29/792 (2013.01);
Abstract

The present disclosure relates to a structure and method for embedding a non-volatile memory (NVM) in a high-K metal gate (HKMG) integrated circuit that utilizes a replacement gate technology with low poly resistance and high program/erase speed. A silicide layer formed over top surfaces of the NVM device, after replacement gate process of the HKMG circuit prevents poly damage during contact formation and provides low gate resistance, thereby improving program/erase speed of the NVM device.

Find Patent Forward Citations

Chuang, Harry-Hak-Lay. (2016). Dual silicide formation method to embed split gate flash memory in high-k metal gate (hkmg) technology (U.S. Patent No. 9276010). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9276010

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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