The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
May. 04, 2015
Applicant:
Microsemi Soc Corporation, San Jose, CA (US);
Inventors:
John L. McCollum, Orem, UT (US);
Fethi Dhaoui, Mountain House, CA (US);
Assignee:
Microsemi SoC Corporation, San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 29/0847 (2013.01); H01L 29/1079 (2013.01);
Abstract
An integrated circuit is formed on a p-type semiconductor substrate connected to ground potential. A deep n-well is disposed in the p-type substrate. A p-well is disposed in the deep n-well. An n+ drain region and an n+ source region are disposed in the p-well, the n+ source region connected to a common potential. A p-type contact is disposed in the p-well and is connected to ground potential through a resistor.