The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Aug. 14, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsin-Yen Huang, Taipei County, TW;
Yu-Sheng Chang, Taipei, TW;
Hai-Ching Chen, Hsinchu, TW;
Tien-I Bao, Taoyuan County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor integrated circuit (IC) with a dielectric matrix is disclosed. The dielectric matrix is located between two conductive features. The matrix includes a first nano-scale dielectric block, a second nano-scale dielectric block, and a first nano-air-gap formed by a space between the first nano-scale dielectric block and the second nano-scale dielectric block. The matrix also includes third nano-scale dielectric block and a second nano-air-gap formed by a space between the second nano-scale dielectric block and the third nano-scale dielectric block. The nano-scale dielectric blocks share a first common width, and the nano-air-gaps share a second common width. An interconnect structure integrates the dielectric matrix with the conductive features.