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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9275903 B1

PDFFull Text
Date of Patent:
Mar. 01, 2016

Filed:

Sep. 17, 2014

Method of manufacturing semiconductor device substrate with crystal structure reformation regions

Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Byoung-Soo Kwak, Seoul, KR;

Youngsu Kim, Hwaseong-si, KR;

Sangwook Park, Hwaseong-si, KR;

Taeje Cho, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;

Attorney:

Harness, Dickey & Pierce

Primary Examiner:

Michael Jung

Assistant Examiner:

Charles R Peters

Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 21/683 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/02013 (2013.01); H01L 21/268 (2013.01); H01L 21/6835 (2013.01); H01L 23/544 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2223/54493 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of manufacturing a semiconductor device include preparing an initial substrate including an edge region and a central region in which circuit patterns are formed, forming a reforming region in the edge region of the initial substrate, grinding the initial substrate to form a substrate, and cutting the substrate to form a semiconductor chip including each of the circuit patterns. A crystal structure of the reforming region is different from that of the initial substrate.

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Kwak, Byoung-Soo. (2016). Method of manufacturing semiconductor device substrate with crystal structure reformation regions (U.S. Patent No. 9275903). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9275903

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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