The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Sep. 17, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Byoung-Soo Kwak, Seoul, KR;
Youngsu Kim, Hwaseong-si, KR;
Sangwook Park, Hwaseong-si, KR;
Taeje Cho, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 21/683 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/02013 (2013.01); H01L 21/268 (2013.01); H01L 21/6835 (2013.01); H01L 23/544 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2223/54493 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method of manufacturing a semiconductor device include preparing an initial substrate including an edge region and a central region in which circuit patterns are formed, forming a reforming region in the edge region of the initial substrate, grinding the initial substrate to form a substrate, and cutting the substrate to form a semiconductor chip including each of the circuit patterns. A crystal structure of the reforming region is different from that of the initial substrate.