The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jul. 28, 2014
Globalfoundries, Inc., Grand Cayman, KY;
Deniz Elizabeth Civay, Clifton Park, NY (US);
Ji Xu, Watervliet, NY (US);
Gerard Schmid, Guilford, CT (US);
Guillaume Bouche, Albany, NY (US);
Richard A. Farrell, Albany, NY (US);
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Abstract
Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a graphoepitaxy DSA directing confinement well using a sidewall of an etch layer that overlies a semiconductor substrate. The graphoepitaxy DSA directing confinement well is filled with a block copolymer. The block copolymer is phase separated into an etchable phase and an etch resistant phase. The etchable phase is etched while leaving the etch resistant phase substantially in place to define an etch mask with a nanopattern. The nanopattern is transferred to the etch layer.