The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Oct. 11, 2013
Applicant:

Advanced Micro-fabrication Equipment Inc, Shanghai, Shanghai, CN;

Inventors:

Lei Xu, Shanghai, CN;

Tuqiang Ni, Shanghai, CN;

Zhaohui Xi, Shanghai, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B23K 10/00 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32091 (2013.01); H01J 37/32165 (2013.01); H01J 37/32183 (2013.01);
Abstract

A plasma processing method for a plasma processing device is provided. The plasma processing device includes a reaction chamber, multiple Radio Frequency (RF) power supplies with different RF frequency outputs apply RF electric fields to the reaction chamber, the output of at least one pulse RF power supply has multiple output states, and the processing method includes a match frequency obtaining step and a pulse processing step. In the match frequency obtaining step, the output state of the pulse RF power supply is switched to make the reaction chamber have multiple impedances to simulate the impedances in the pulse processing step. The output frequencies of the variable frequency RF power supply are adjusted to match the simulated impedances. The adjusted output frequencies are stored as match frequencies. In the subsequent pulse processing step, the fast switched impedances are instantly matched by the stored match frequencies.


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