The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Jun. 26, 2013
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Li Yang, San Jose, CA (US);

Kejia Wang, Poughkeepsie, NY (US);

Ashish Baraskar, White Plains, NY (US);

Bin Yang, San Carlos, CA (US);

Shurong Liang, Poughkeepsie, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02658 (2013.01); H01L 21/0243 (2013.01); H01L 21/02373 (2013.01); H01L 21/02538 (2013.01); H01L 29/045 (2013.01); H01L 29/20 (2013.01);
Abstract

One method disclosed herein includes forming a patterned mask layer above a surface of a semiconductor substrate, performing at least one etching process through the patterned mask layer to define a plurality of intersecting ridges that define a ridged surface in the substrate, and forming a Group III-V material on the ridged surface of the substrate. An illustrative device disclosed herein includes a Group IV substrate having a ridged surface comprised of a plurality of intersecting ridges and a Group III-V material layer positioned on the ridged surface of the Group IV substrate.


Find Patent Forward Citations

Loading…