The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Oct. 06, 2014
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chin-Hung Chang, Tainan, TW;

Chia-Jung Chen, Zhubei, TW;

Su-Chueh Lo, Hsinchu, TW;

Ken-Hui Chen, Dali, TW;

Kuen-Long Chang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 7/10 (2006.01); G11C 7/08 (2006.01); G11C 7/18 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1048 (2013.01); G11C 7/06 (2013.01); G11C 7/08 (2013.01); G11C 7/106 (2013.01); G11C 7/12 (2013.01); G11C 7/18 (2013.01); G11C 2207/002 (2013.01);
Abstract

A read operation for a memory device is provided. A selected word line, first and second global bit line groups and a selected first bit line group are precharged. A first cell current flowing through the selected word line, the first and the selected first bit line groups is generated. A first reference current flowing through the second global bit line group is generated. A first half page data is read based on the first cell current and the first reference current. The selected word line, the first and the second global bit line groups are kept precharged.


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