Method for evaluating degree of crystalline orientation of polycrystalline silicon, method for selecting polycrystalline silicon rod, polycrystalline silicon rod, polycrystalline silicon ingot, and method for manufacturing monocrystalline silicon

Abstract

When the degree of crystalline orientation of polycrystalline silicon is evaluated by an X-ray diffraction method, each obtained disc-like sampleis disposed in a position where Bragg reflection from a Miller index face <hkl> is detected and in-plane rotated at a rotational angle φ with the center of the disc-like sampleas the center of rotation, so that an X-ray-radiated region defined by a slit φ-scans over the principal surface of the disc-like sample, to determine a chart representing the dependence of the intensity of Bragg reflection from the Miller index face <hkl> on the rotational angle (φ) of the disc-like sample, a baseline is determined from the chart, and the diffraction intensity value of the baseline is used as an estimative index of the degree of crystalline orientation.