The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
May. 14, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventor:
Yu-Rung Hsu, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/764 (2013.01); H01L 29/66795 (2013.01);
Abstract
The present disclosure relates to a structure and method for fin isolation in bulk FinFETs. A sacrificial portion is formed between the actual fin and the substrate, which gets selectively removed at a later stage of processing to reveal a cavity which extends all the way under the fin. This helps prevent source/drain leakage as there is no path for current flow between the fin and bulk substrate. Furthermore, this method of formation helps in precise control of fin-height in bulk FinFETs.