The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jul. 09, 2013
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Yasuhiro Okamoto, Kanagawa, JP;
Takashi Inoue, Kanagawa, JP;
Tatsuo Nakayama, Kanagawa, JP;
Ryohei Nega, Kanagawa, JP;
Masaaki Kanazawa, Kanagawa, JP;
Hironobu Miyamoto, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
The reliability of a field effect transistor made of a nitride semiconductor material is improved. An ohmic electrode includes a plurality of unit electrodes isolated to be separated from each other. With this configuration, an on-state current can be prevented from flowing in the unit electrodes in a y-axial direction (negative direction). Further, in the respective unit electrodes, a current density of the on-state current flowing in the y-axial direction (negative direction) can be prevented from increasing. As a result, an electromigration resistance of the ohmic electrode can be improved.