The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Sep. 07, 2012
Applicants:
Masahito Kanamura, Isehara, JP;
Toyoo Miyajima, Isehara, JP;
Toshihiro Ohki, Hadano, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H03F 1/32 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 21/28264 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H03F 1/3247 (2013.01);
Abstract
A semiconductor device, comprising: a first semiconductor layer disposed on a substrate; a second semiconductor layer disposed on the first semiconductor layer; a lower insulating film disposed on the second semiconductor layer; a p-type electroconductive oxide film disposed on the lower insulating film; an upper insulating film disposed on the oxide film; and a gate electrode disposed on the upper insulating film, wherein the lower insulating film under the gate electrode has a depressed portion.