The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Feb. 25, 2015
Applicant:

Globalfoundries Singapore Pte Ltd, Singapore, SG;

Inventors:

Yu Hong, Singapore, SG;

Liu Huang, Singapore, SG;

Zhao Feng, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76847 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01); H01L 23/53238 (2013.01); H01L 23/53257 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00013 (2013.01);
Abstract

A semiconductor chip includes a substrate and a semiconductor layer positioned above the substrate. A hybrid through-silicon via ('TSV') extends continuously through at least the semiconductor layer and the substrate and includes a first TSV portion and a second TSV portion. A lower portion of the first TSV portion is positioned in the substrate and has a lower surface adjacent to a back side of the substrate and an upper surface below the semiconductor layer. Upper sidewall portions of the first TSV portion extend from the upper surface through at least the semiconductor layer. A depth of the lower portion is greater than a thickness of the upper sidewall portions. The second TSV portion is conductively coupled to the first TSV portion, is laterally surrounded by the upper sidewall portions, and extends continuously from the upper surface through at least the semiconductor layer.


Find Patent Forward Citations

Hong, Yu. (2016). Hybrid tsv and method for forming the same (U.S. Patent No. 9269651). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9269651

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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