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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9269644 B1

PDFFull Text
Date of Patent:
Feb. 23, 2016

Filed:

Sep. 03, 2013

Method for producing semiconductor device

Applicants:

Yoshitaka Nishimura, Nagano, JP;

Akira Morozumi, Nagano, JP;

Kazunaga Ohnishi, Nagano, JP;

Eiji Mochizuki, Nagano, JP;

Yoshikazu Takahashi, Nagano, JP;

Inventors:

Yoshitaka Nishimura, Nagano, JP;

Akira Morozumi, Nagano, JP;

Kazunaga Ohnishi, Nagano, JP;

Eiji Mochizuki, Nagano, JP;

Yoshikazu Takahashi, Nagano, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:

Manabu Kanesaka

Primary Examiner:

Eugene Lee

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/34 (2006.01); H01L 23/373 (2006.01); H05K 3/00 (2006.01); H05K 1/03 (2006.01); H05K 3/34 (2006.01);
U.S. Cl.
CPC ...
H01L 23/34 (2013.01); H01L 23/3735 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H05K 3/0061 (2013.01); H05K 3/3463 (2013.01); H01L 2224/291 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83801 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/0134 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01068 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/3511 (2013.01); H05K 1/0306 (2013.01); H05K 3/341 (2013.01);
Abstract

A method for producing a semiconductor device includes solder-connecting a semiconductor chip, onto an insulating substrate including a ceramic board and having conductor layers on two surfaces thereof, with a lead-free solder; warping a radiating base such that a surface of the radiating base on a side opposite to the insulating substrate is convex; and solder-connecting the insulating substrate onto the warped radiating base with the lead-free solder so as to provide a substantially flat solder-connected radiating base.

Find Patent Forward Citations

Nishimura, Yoshitaka. (2016). Method for producing semiconductor device (U.S. Patent No. 9269644). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9269644

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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