The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Sep. 12, 2013
Applicant:
Denso Corporation, Kariya, Aichi-pref., JP;
Inventors:
Shouichi Yamauchi, Obu, JP;
Naohiko Hirano, Okazaki, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01); C30B 29/36 (2006.01); H01L 23/544 (2006.01); C30B 23/02 (2006.01); C30B 25/20 (2006.01); H01L 29/16 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02656 (2013.01); C30B 23/025 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/02005 (2013.01); H01L 21/02529 (2013.01); H01L 21/02645 (2013.01); H01L 21/304 (2013.01); H01L 21/306 (2013.01); H01L 23/544 (2013.01); H01L 29/1608 (2013.01); H01L 2223/54413 (2013.01); H01L 2223/54433 (2013.01); H01L 2223/54453 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A silicon carbide semiconductor substrate is made of a silicon carbide single crystal and is formed with a stamp on at least a surface as an identification indication formed of a crystal defect. When a silicon carbide single crystal is allowed to grow using the silicon carbide semiconductor substrate as a seed crystal, the stamp can be propagated to the silicon carbide single crystal as a crystal defect. When silicon carbide semiconductor substrates are manufactured using the silicon carbide single crystal, the stamp has already been formed on each of the silicon carbide semiconductor substrates.