The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Sep. 18, 2008
Applicants:

Kazuyoshi Inoue, Sodegaura, JP;

Koki Yano, Sodegaura, JP;

Shigekazu Tomai, Sodegaura, JP;

Futoshi Utsuno, Sodegaura, JP;

Masashi Kasami, Sodegaura, JP;

Kenji Goto, Sodegaura, JP;

Hirokazu Kawashima, Sodegaura, JP;

Inventors:

Kazuyoshi Inoue, Sodegaura, JP;

Koki Yano, Sodegaura, JP;

Shigekazu Tomai, Sodegaura, JP;

Futoshi Utsuno, Sodegaura, JP;

Masashi Kasami, Sodegaura, JP;

Kenji Goto, Sodegaura, JP;

Hirokazu Kawashima, Sodegaura, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); H01L 21/02422 (2013.01); H01L 21/02631 (2013.01); H01L 29/7869 (2013.01);
Abstract

To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.


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