The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Mar. 18, 2015
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Naonori Akae, Toyama, JP;

Yoshiro Hirose, Toyama, JP;

Yushin Takasawa, Toyama, JP;

Yosuke Ota, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/314 (2006.01); C23C 16/455 (2006.01); H01L 21/316 (2006.01); H01L 21/02 (2006.01); H01L 21/318 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); C23C 16/45512 (2013.01); C23C 16/45525 (2013.01); C23C 16/45546 (2013.01); C23C 16/45574 (2013.01); C23C 16/45578 (2013.01); H01L 21/0223 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02211 (2013.01); H01L 21/02238 (2013.01); H01L 21/02263 (2013.01); H01L 21/02337 (2013.01); H01L 21/02532 (2013.01); H01L 21/31612 (2013.01);
Abstract

A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.


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