The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Mar. 23, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Hyun-Kook Park, Anyang-si, KR;
Dae-Seok Byeon, Seongnam-si, KR;
Yeong-Taek Lee, Seoul, KR;
Bo-Geun Kim, Hwaseong-si, KR;
Yong-Kyu Lee, Hwaseong-si, KR;
Hyo-Jin Kwon, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G11C 13/0069 (2013.01);
Abstract
A resistive memory device includes a memory cell array including a plurality vertically stacked layers having one layer designated as an interference-free layer and another layer designated as an access prohibited layer, wherein the interference-free layer and the access prohibited layer share a connection with at least one signal line and access operations directed to memory cells the access prohibited layer are prohibited.