The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Dec. 10, 2012
Sandisk 3d Llc, Milpitas, CA (US);
Zhida Lan, San Jose, CA (US);
Roy E. Scheuerlein, Cupertino, CA (US);
Tong Zhang, Palo Alto, CA (US);
Kun Hou, Milpitas, CA (US);
Perumal Ratnam, Fremont, CA (US);
SANDISK 3D LLC, Milpitas, CA (US);
Abstract
A three-dimensional array of memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. The memory elements can be set to a low resistance state and reset to a high resistance state during standard operation by biasing appropriate voltages on the word lines and bit lines. Prior to standard operation, the memory elements undergo a forming operation, during which current through the bit lines is limited. A forming voltage is applied to the memory elements during forming with a polarity such that a higher voltage is applied to anodes and a lower voltage to cathodes.