The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Oct. 21, 2010
Applicant:

Atsutoshi Arakawa, Ibaraki, JP;

Inventor:

Atsutoshi Arakawa, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); G11B 5/851 (2006.01); C22C 19/03 (2006.01); C22C 19/07 (2006.01); C22C 38/00 (2006.01); C22C 38/08 (2006.01); C22C 38/10 (2006.01); H01F 41/18 (2006.01);
U.S. Cl.
CPC ...
G11B 5/851 (2013.01); C22C 19/03 (2013.01); C22C 19/07 (2013.01); C22C 38/002 (2013.01); C22C 38/08 (2013.01); C22C 38/10 (2013.01); C22C 38/105 (2013.01); C23C 14/3414 (2013.01); H01F 41/183 (2013.01);
Abstract

A magnetic sputtering target which contains B and is obtained by a melting and casting method, wherein the B content is 10 at % or more and 50 at % or less, and the remainder is one or more elements selected from Co, Fe, and Ni. Based on the method of the present invention, the sputtering target, in which gaseous impurities are few, there are no cracks and fractures, and segregation of its main constituent elements is minimal, is obtained. Consequently, when sputtered with a magnetron sputtering device comprising a DC power supply, this sputtering target yields a significant effect of being able to inhibit the generation of particles during sputtering, and improve the production yield upon forming thin films.


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