The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Dec. 18, 2013
Applicant:

Phison Electronics Corp., Miaoli, TW;

Inventors:

Wei Lin, Taipei, TW;

Shao-Wei Yen, Kaohsiung, TW;

Yu-Hsiang Lin, Yunlin County, TW;

Kuo-Hsin Lai, Hsinchu County, TW;

Kuo-Yi Cheng, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1008 (2013.01); G06F 11/1048 (2013.01);
Abstract

A decoding method, a memory storage device and a memory controlling circuit unit are provided. The method includes: reading memory cells according to a first reading voltage to obtain first verifying bits; executing a decoding procedure including a probability decoding algorithm according to the first verifying bits to obtain first decoded bits, and determining whether a decoding is successful by using the decoded bits; if the decoding is failed, reading the memory cells according to a second reading voltage to obtain second verifying bits, and executing the decoding procedure according to the second verifying bits to obtain second decoded bits. The second reading voltage is different from the first reading voltage, and the number of the second reading voltage is equal to the number of the first reading voltage. Accordingly, the ability for correcting errors is improved.


Find Patent Forward Citations

Loading…