The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Jun. 18, 2012
Applicants:

Jun Koike, Tokyo, JP;

Fujito Yamaguchi, Tokyo, JP;

Masatoshi Maeda, Tokyo, JP;

Shinji Arihisa, Tokyo, JP;

Masayoshi Arihisa, Tokyo, JP;

Inventors:

Jun Koike, Tokyo, JP;

Fujito Yamaguchi, Tokyo, JP;

Masatoshi Maeda, Tokyo, JP;

Shinji Arihisa, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/58 (2010.01); H01L 21/469 (2006.01); G03F 7/00 (2006.01); B29C 33/38 (2006.01); B29C 33/42 (2006.01); H01L 33/00 (2010.01); B29C 33/40 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); B29C 33/3842 (2013.01); B29C 33/40 (2013.01); B29C 33/424 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/0002 (2013.01); H01L 21/469 (2013.01); H01L 33/005 (2013.01); H01L 33/20 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0083 (2013.01);
Abstract

Disclosed is a layered product for fine pattern formation and a method of manufacturing the layered product for fine pattern formation, capable of easily forming a fine pattern having a thin or no remaining film in order to form a fine pattern having a high aspect ratio on a processing object. The layered product for fine pattern formation (1) of the present invention used to form a fine pattern () in a processing object () using a first mask layer () includes: a mold () having a concavo-convex structure () on a surface; and a second mask layer () provided on the concavo-convex structure (), wherein in the second mask layer (), a distance (lcc) and a height (h) of the concavo-convex structure () satisfy Formula (1) 0<lcc<1.0 h, and a distance (lcv) and the height (h) satisfy Formula (2) 0≦lcv≦0.05 h.


Find Patent Forward Citations

Loading…