The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Dec. 12, 2013
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Tetsu Morooka, Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment, includes a first dielectric film arranged above a gate electrode, an oxide semiconductor film arranged above the first dielectric film, a second dielectric film arranged above the oxide semiconductor film, a drain electrode having a drain contact portion that is arranged in the second dielectric film and connects one end side of the oxide semiconductor film to a wire of an upper layer, and a source electrode having a source contact portion that is arranged in the second dielectric film and connects another end side of the oxide semiconductor film to a wire of an upper layer. A wiring portion arranged above the second dielectric film and forming the wire of the upper layer is formed to overhang toward a center direction of the oxide semiconductor film on a source electrode side more than on a drain electrode side.