The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Aug. 05, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Sheng-De Liu, Zhongli, TW;
Ming-Chyi Liu, Hsin-Chu, TW;
Chung-Yen Chou, Hsin-Chu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Embodiments of the present disclosure include a method for forming a semiconductor device, a method for forming a MISFET device, and a MISFET device. An embodiment is a method for forming a semiconductor device, the method including forming a source/drain over a substrate, forming a first etch stop layer on the source/drain, and forming a gate dielectric layer on the first etch stop layer and along the substrate. The method further includes forming a gate electrode on the gate dielectric layer, forming a second etch stop layer on the gate electrode, and removing the gate dielectric layer from over the source/drain.