The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Jan. 16, 2012
Applicant:
Fumitake Mieno, Beijing, CN;
Inventor:
Fumitake Mieno, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 23/498 (2006.01); H01L 29/43 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7781 (2013.01); H01L 21/28255 (2013.01); H01L 29/1054 (2013.01); H01L 29/66545 (2013.01); H01L 29/66651 (2013.01); H01L 29/165 (2013.01); H01L 29/4983 (2013.01);
Abstract
The present invention relates to a semiconductor device and its manufacturing method. The semiconductor device comprises: a gate structure located on a substrate, Ge-containing semiconductor layers located on the opposite sides of the gate structure, a doped semiconductor layer epitaxially grown between the Ge-containing semiconductor layers, the bottom surfaces of the Ge-containing semiconductor layers located on the same horizontal plane as that of the epitaxial semiconductor layer. The epitaxial semiconductor layer is used as a channel region, and the Ge-containing semiconductor layers are used as source/drain extension regions.