The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Dec. 09, 2013
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Assignee:
QUALCOMM Incorporated, San Dieogo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/10 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 21/74 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1045 (2013.01); H01L 21/743 (2013.01); H01L 29/1054 (2013.01); H01L 29/1087 (2013.01); H01L 29/205 (2013.01); H01L 29/66522 (2013.01); H01L 29/66636 (2013.01); H01L 29/785 (2013.01); H01L 29/7834 (2013.01); H01L 29/7848 (2013.01);
Abstract
An apparatus comprises a substrate. The apparatus also comprises a diffusion barrier formed on a surface of a first region of the substrate. The diffusion barrier is formed using a first material having a first band gap energy. The apparatus further comprises a channel region formed on a surface of the diffusion barrier. The channel region is formed using a second material having a second band gap energy that is lower than the first band gap energy. The apparatus further comprises a back gate contact coupled to the first region of the substrate.