The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Aug. 19, 2013
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Ling Hung, Kaohsiung, TW;

Hsin-Liang Chen, Taipei, TW;

Wing-Chor Chan, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/0629 (2013.01); H01L 29/7436 (2013.01);
Abstract

A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate, a first doping region, a first well, a resistor element, and a first, a second, and a third heavily doping regions. The first well and the third heavily doping region are disposed in the first doping region, which is disposed on the substrate. The first heavily doping region and the second heavily doping region, which are separated from each other, are disposed in the first well. The second and the third heavily doping regions are electrically connected via the resistor element. Each of the substrate, the first well, and the second heavily doping region has a first type doping. Each of the first doping region, the first heavily doping region, and the third heavily doping region has a second type doping, complementary to the first type doping.


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